Reliability and variability-aware simulations of logic cells are essential to correctly analyze and predict the performance of upcoming technologies. A simulation flow for DTCO is presented here, which combines the accuracy of TCAD with the performance of SPICE - utilizing parasitic extractions, the impedance field method for variations, and the compact-physics simulator comphy for reliability. Good agreement with experimental RO performance of N14 is demonstrated and projections to N3 FinFET and nanosheet technologies are made.
Publication date: 21 March 2021
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