Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks

{“@id”:”/api/v1/downloads/3425″,”@type”:”Download”,”id”:3425,”title”:”Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks”,”filename”:”IRPS-2022_Trap-polarization-interaction-during-low-field-trap-characterization-on-hafnia-based-ferroelectric-gatestacks”,”abstract”:”This paper investigates the characterization of charge trapping and its modelling on hafnia-based ferroelectric field effect transistors (FeFETs). Defect characterization on MOSFETs can be done by studying threshold voltage shifts (∆Vth) as a function of charging and relaxation times. At positive gate voltages one expects electron trapping in the gate oxide to result in a positive shift of the threshold voltage (Vth). However, on a FeFET those conditions will induce polarization changes in the gate oxide leading to a negative Vth-shift, complicating the characterization of defect levels. We aim to alleviate these difficulties by modelling the polarization and trapping in FeFETs over a wide range of timescales, suitable for defect characterization. We demonstrate quantitative agreement on long timescales with a static polarization model, while a time-dependent polarization model can be used for qualitative agreement over a wide range of times from 30 ms to 2 ks.”,”level”:null,”doi”:”10.1109/IRPS48227.2022.9764603″,”status”:”published”,”remarks”:”CoAuthor: M. Thesberg”,”files”:[{“@type”:”File”,”id”:30647,”name”:”IRPS-2022_Trap-polarization-interaction-during-low-field-trap-characterization-on-hafnia-based-ferroelectric-gatestacks.nofile”,”bytes”:0}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/86″,”@type”:”DownloadTag”,”id”:86,”name”:”reliability”},{“@id”:”/api/v1/download_tags/209″,”@type”:”DownloadTag”,”id”:209,”name”:”Logic gates”},{“@id”:”/api/v1/download_tags/210″,”@type”:”DownloadTag”,”id”:210,”name”:”Market research”},{“@id”:”/api/v1/download_tags/268″,”@type”:”DownloadTag”,”id”:268,”name”:”MOSFET”},{“@id”:”/api/v1/download_tags/313″,”@type”:”DownloadTag”,”id”:313,”name”:”Threshold voltage”},{“@id”:”/api/v1/download_tags/323″,”@type”:”DownloadTag”,”id”:323,”name”:”Iron”},{“@id”:”/api/v1/download_tags/372″,”@type”:”DownloadTag”,”id”:372,”name”:”Statistical analysis”},{“@id”:”/api/v1/download_tags/373″,”@type”:”DownloadTag”,”id”:373,”name”:”Ferroelectrics”},{“@id”:”/api/v1/download_tags/374″,”@type”:”DownloadTag”,”id”:374,”name”:”FeFET”},{“@id”:”/api/v1/download_tags/375″,”@type”:”DownloadTag”,”id”:375,”name”:”Trapping”},{“@id”:”/api/v1/download_tags/376″,”@type”:”DownloadTag”,”id”:376,”name”:”Modelling”},{“@id”:”/api/v1/download_tags/377″,”@type”:”DownloadTag”,”id”:377,”name”:”HfOx”}],”date”:”2022-03-27T00:00:00+01:00″,”authors”:”B. Truijen, B. O’Sullivan, M. N. K. Alam, D. Claes, M. Thesberg, P. Roussel, A. Chasin, G. V. d. Bosch, B. Kaczer, and J. V. Houdt”}