We present the first practical TCAD-based work flow for design-technology co-optimization (DTCO) of standard cells. The flow consists of parametric cell layout templates, layout-based structure generation, mixed-mode transient electri- cal device simulation, and data collection and analysis. Based on electrical and structural characterizations of the iN14, iN10, and iN7 nodes, the models presented in this work feature a projection for 5nm technology nodes based on FinFET, nanowire, and nanosheet. Transient five-stage ring-oscillator simulations show a clear advantage for the FinFET in terms of switching frequency and power consumption.
Publication date: 03 September 2018
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