On-Current Degradation in Ultra-Scaled Nanosheet FETs With S/D Underlap Doping

{“@id”:”/api/v1/downloads/3683″,”@type”:”Download”,”id”:3683,”title”:”On-Current Degradation in Ultra-Scaled Nanosheet FETs With S/D Underlap Doping”,”filename”:”EDL-2025_On-Current-Degradation-in-Ultra-Scaled-Nanosheet-FETs-With-S-D-Underlap-Doping”,”abstract”:”Aggressive gate pitch scaling makes it increasingly challenging to control the doping gradient at the source/drain (S/D) extensions. To address this, S/D underlap doping has been proposed as a solution. However, anomalous ID,lin saturation has been experimentally observed in such devices, raising questions about its physical origin. In this work, we investigate the transport physics in ultra-scaled nanosheet FETs by solving the Subband Boltzmann Transport Equation. The simulation results reveal that secondary barriers formed in underdoped S/D extensions enhance quasi-ballistic transport even in the linear regime, providing a consistent explanation for the observed ID,lin saturation in underlap devices. These insights offer guidance for optimizing S/D underlap doping profiles, highlighting the need to avoid excessive Gate-S/D overlap capacitance while preventing on-current degradation.”,”level”:null,”doi”:”10.1109/led.2025.3614369″,”status”:”published”,”remarks”:”PrimAuthor: L.-C. Hung”,”files”:[{“@type”:”File”,”id”:30689,”name”:”EDL-2025_On-Current-Degradation-in-Ultra-Scaled-Nanosheet-FETs-With-S-D-Underlap-Doping.pdf”,”bytes”:4433495}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/58″,”@type”:”DownloadTag”,”id”:58,”name”:”nds”},{“@id”:”/api/v1/download_tags/60″,”@type”:”DownloadTag”,”id”:60,”name”:”innovation”},{“@id”:”/api/v1/download_tags/69″,”@type”:”DownloadTag”,”id”:69,”name”:”tcad”},{“@id”:”/api/v1/download_tags/70″,”@type”:”DownloadTag”,”id”:70,”name”:”si pathfinding”},{“@id”:”/api/v1/download_tags/98″,”@type”:”DownloadTag”,”id”:98,”name”:”nanosheet”},{“@id”:”/api/v1/download_tags/193″,”@type”:”DownloadTag”,”id”:193,”name”:”subband boltzmann transport”},{“@id”:”/api/v1/download_tags/196″,”@type”:”DownloadTag”,”id”:196,”name”:”Three-dimensional displays”},{“@id”:”/api/v1/download_tags/206″,”@type”:”DownloadTag”,”id”:206,”name”:”Degradation”},{“@id”:”/api/v1/download_tags/209″,”@type”:”DownloadTag”,”id”:209,”name”:”Logic gates”},{“@id”:”/api/v1/download_tags/229″,”@type”:”DownloadTag”,”id”:229,”name”:”Field effect transistors”},{“@id”:”/api/v1/download_tags/230″,”@type”:”DownloadTag”,”id”:230,”name”:”Nanoscale devices”},{“@id”:”/api/v1/download_tags/306″,”@type”:”DownloadTag”,”id”:306,”name”:”Capacitance”},{“@id”:”/api/v1/download_tags/353″,”@type”:”DownloadTag”,”id”:353,”name”:”Doping profiles”},{“@id”:”/api/v1/download_tags/354″,”@type”:”DownloadTag”,”id”:354,”name”:”Electrostatics”},{“@id”:”/api/v1/download_tags/355″,”@type”:”DownloadTag”,”id”:355,”name”:”Scattering”},{“@id”:”/api/v1/download_tags/356″,”@type”:”DownloadTag”,”id”:356,”name”:”Electric potential”},{“@id”:”/api/v1/download_tags/357″,”@type”:”DownloadTag”,”id”:357,”name”:”S/D underlap doping”},{“@id”:”/api/v1/download_tags/358″,”@type”:”DownloadTag”,”id”:358,”name”:”ultra-scaled CMOS devices”}],”date”:”2025-09-25T00:00:00+02:00″,”authors”:”L. Hung, Z. Stanojević, F. Schanovsky, H. Kosina, and M. Karner”}