On-Current Degradation in Ultra-Scaled Nanosheet FETs with S/D Underlap Doping

{“@id”:”/api/v1/downloads/2964″,”@type”:”Download”,”id”:2964,”title”:”On-Current Degradation in Ultra-Scaled Nanosheet FETs with S/D Underlap Doping”,”filename”:”EDL-2025_On-Current-Degradation-in-Ultra-Scaled-Nanosheet-FETs-with-S-D-Underlap-Doping”,”abstract”:”Aggressive gate pitch scaling makes it increasingly challenging to control the doping gradient at the source/drain (S/D) extensions. To address this, S/D underlap doping has been proposed as a solution. However, anomalous ID,lin saturation has been experimentally observed in such devices, raising questions about its physical origin. In this work, we investigate the transport physics in ultra-scaled nanosheet FETs by solving the Subband Boltzmann Transport Equation. The simulation results reveal that secondary barriers formed in underdoped S/D extensions enhance quasi-ballistic transport even in the linear regime, providing a consistent explanation for the observed ID,lin saturation in underlap devices. These insights offer guidance for optimizing S/D underlap doping profiles, highlighting the need to avoid excessive Gate-S/D overlap capacitance while preventing on-current degradation.”,”level”:null,”doi”:”10.1109/LED.2025.3614369″,”status”:”published”,”remarks”:null,”files”:[{“@type”:”File”,”id”:24761,”name”:”EDL-2025_On-Current-Degradation-in-Ultra-Scaled-Nanosheet-FETs-with-S-D-Underlap-Doping.pdf”,”bytes”:4433495}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/58″,”@type”:”DownloadTag”,”id”:58,”name”:”nds”},{“@id”:”/api/v1/download_tags/60″,”@type”:”DownloadTag”,”id”:60,”name”:”innovation”},{“@id”:”/api/v1/download_tags/70″,”@type”:”DownloadTag”,”id”:70,”name”:”si pathfinding”},{“@id”:”/api/v1/download_tags/98″,”@type”:”DownloadTag”,”id”:98,”name”:”nanosheet”}],”date”:”2025-12-09T00:00:00+01:00″,”authors”:”L.-C. Hung, Z. Stanojevi\u0107, F. Schanovsky, H. Kosina, and M. Karner”}