We present a hierarchical flow for predictive TCAD device simulation in DCTO applications. Using a thoroughly cal-ibrated sub-band Boltzmann transport equation (SBTE) solver, TCAD device simulation parameters for the technology under investigation are generated automatically. This flow enables predictive accuracy of the SBTE solver at turn-around-times of SPICE simulations. It is demonstrated here for an A14 nanosheet technology, i) showing all intermediate calibration details and ii) highlighting a considerable improvement in the accuracy of ring-oscillator performance.
Publication date: 25 September 2024
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