From Si to MoS2 – Device Simulation Based on the Direct Solution of the Boltzmann Transport Equation

Z. Stanojević, C. Tsai, J. M. G. Medina, L. Hung, and M. Karner
We extend the versatile and efficient Nano Device Simulator methodology developed for Si and Ge-based devices to enable simulation of TMD-based MOSFETs based on the direct solution of the Boltzmann transport equation. The methodology addresses the most important aspects of carrier transport within the semi-classical theoretical framework. Fully embedded in a TCAD environment, the presented approach allows to investigate a myriad of different TMD device architectures and concepts.
Publication date: 22 October 2023
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