We extend the versatile and efficient Nano Device Simulator methodology developed for Si and Ge-based devices to enable simulation of TMD-based MOSFETs based on the direct solution of the Boltzmann transport equation. The methodology addresses the most important aspects of carrier transport within the semi-classical theoretical framework. Fully embedded in a TCAD environment, the presented approach allows to investigate a myriad of different TMD device architectures and concepts.
Publication date: 22 October 2023
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