An Effective-Medium TCAD Model of Amorphous In-Ga-Zn-O (a-IGZO) Suitable for Large-Area Devices

M. Thesberg, Z. Stanojević, F. Schanovsky, J. González-Medina, G. Rzepa, F. Mitterbauer, O. Baumgartner, and M. Karner
IGZO is a disordered material whose transport is typified by percolative flow through a rolling landscape of a spatially-varying conduction-band-edge. Our previous Microscopic TCAD model of a-IGZO replicated percolative flow via directly simulating this spatial variation. However, this is difficult for large-area devices as it requires fine spatial resolution. Here we introduce a new Effective-Medium TCAD model that is shown to be accurate (relative to both the Microscopic model and experiment) in the coarse-gridding and largedevice regime.
Publication date: 24 September 2025
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