Classical Semiconductor Device and Circuit Simulator

Screenshot: Vertically stacked nw fet

Icon: GTS Minimos-NT

GTS Minimos-NT is a general-purpose 2D and 3D semiconductor device simulator providing steady-state, transient, and small-signal analysis of arbitrary two and three dimensional device geometries. In mixed-mode, numerical device simulations can be embedded in circuit simulation with circuits consisting of 2D/3D TCAD devices, compact device models, and passive elements.

GTS Minimos-NT integrates a comprehensive set of physical models for simulation of various kinds of advanced device structures, such as contemporary planar and vertical CMOS devices, silicon-on-insulator (SOI) devices, and hetero-structure devices. Taking into account atomistic traps and dopants, GTS Minimos-NT provides reliability and variability modeling of highly scaled transistors, having a channel length down to nanometer scale. Different materials are treated in an abstract way since all material properties are handled via a database which under control of the model server.

GTS Minimos-NT employs the powerful input-deck language, enabling the user to customize the simulation in many details. The basic idea is that the input-deck is not evaluated once at the beginning of the simulation, but is treated like a database which can be accessed at run-time. Since each keyword in this input-deck can be an arbitrarily complex and time dependent expression, fine-tuning can be done without the need of any predefined heuristic algorithms, e.g., controlling the stepping delta or increasing the matrix pre-conditioner fill-in depending on bias or for time steps with large curvature of the input signals.

Features

Basic features

  • Drift-diffusion transport models
  • Hydrodynamic (energy) transport model
  • Two- and three-dimensional device structures
  • Simulation modes: DC, AC, transient; mixed-mode
  • Self-heating simulation with lattice heat flow equation

Environment

  • Integration with GTS Framework
  • Graphical user interface
  • Sophisticated input-deck database
  • Multi-core simulation support
  • Material database extendable via C++ like script language
  • Unstructured and structured meshes in two and three dimensions

Physical models

  • Multitude of mobility models
  • Band gap narrowing
  • Band-to-band tunneling
  • Trap assisted band-to-band tunneling
  • Impact ionization
  • Quantum correction models
  • Density-gradient model
  • Mobility degradation models
  • Hot-carrier degradation
  • BTI models
  • Optical generation model
  • Irradiation models
  • Heterostructure interfaces handled with thermionic emission model or a thermionic field emission model
  • Tunneling models for gate leakage simulations

Specific simulations and materials

  • Support for EEPROM simulation: floating gates and oxide traps
  • Ferroelectric polarization field in transient simulations
  • Parasitics extraction: resistances and capacitances
  • Direct extraction of S and Y matrices
  • Models for Silicon Carbide (SiC) devices
  • Extensive and extendable material database
  • Abstract materials handling via a material database. Models available for Si, Ge, SiGe, SiC, SiN, GaAs, AlAs, InAs, InP, GaP, GaN, AlGaAs, InGaAs, InAlAs, InAsP, GaAsP, InGaP, SiO2, Si3N4, AlN, Al2O3, and BeO.
  • Circuit analysis with an additional thermal circuit
  • BSIM4 compact model

Variability and reliability

  • Statistical reliability analysis
  • Variability analysis
  • Atomistic traps and dopants
  • Latest BTI models (NBTI, PBTI)

Proven, consistent, comprehensive

A comprehensive set of physically-based models allows for simulating various kinds of advanced device structures, such as contemporary vertical and planar CMOS devices, silicon-on-insulator (SOI) devices, and hetero-structure devices made of all currently used semiconductor materials. Taking into account the atomistic nature of traps and dopants, GTS Minimos-NT provides reliability and variability modeling of highly scaled transistors, such as planar devices and silicon-on-insulator as well as FinFETs, having channel lengths in the nanometer scale. Support for mixed-mode simulations of circuits made of lumped components and numerical semiconductor devices including self-heating simulation and thermal circuit analysis make GTS Minimos-NT a powerful tool in any TCAD application or DTCO flow.

Want to learn more?

Please check the examples, tutorials, publications and further information in the Related column.
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