A Fabrication Process Simulator for Topography and Doping Simulation

Process Simulator

GTS ProSim is a physical fabrication simulator for Si and SiGe devices. It covers the full front-end process sequence – ion implantation (analytical and Monte Carlo), annealing, dopant diffusion and activation, oxidation, and mechanical stress – alongside the structuring steps lithography, etching, deposition, and epitaxial growth.

Fully embedded in GTS Framework, ProSim delivers process-aware pathfinding: simulated structures carry their complete doping, stress, and geometry history into device simulation with Minimos-NT and visualization with GTS Vision.

Simulation Models

Ion Implantation

Analytical and Monte Carlo implantation in 2D and 3D.

  • Analytical implantation tables for B, BF2, As, P, In, Sb, Ge, C, F, and N with an extended energy range up to 5 MeV
  • Monte Carlo implantation with pre-amorphization and flexible material configuration
  • Damage and dose accumulation for subsequent anneal steps

Diffusion and Dopant Activation

  • Fermi-level dependent diffusion of dopants, defects, and pairs
  • User prefactors for all diffusivities, concentrations, and rates – alloy-dependent, stress-dependent, or fully custom
  • High-density models for dopant segregation and clustering
  • SiGe: reaction/diffusion parameter interpolation, Si/Ge interdiffusion, and segregation
  • Optimized for speed on workstations and servers

Annealing and Thermal Oxidation

  • Full oxidation model with moving boundaries
  • Coupled to diffusion, activation, and stress evolution

Mechanical Stress

  • Time-dependent viscoelastic stress model with non-linear yield behavior
  • Stress sources: oxidation, thermal expansion, lattice mismatch, and dopants
  • Automatic stress history tracking throughout the process flow

Structuring: Lithography, Etching, Deposition, Epitaxy

  • Mask-based lithography from your layouts
  • Isotropic, anisotropic, and selective etching
  • Deposition and epitaxial growth

Geometry and Meshing

  • Robust geometry kernel for complex 2D and 3D real-world structures
  • Adaptive refinement aligned with doping and stress gradients

Integration and Compatibility

ProSim is designed to interface with your existing systems and flows.

  • Seamless handover to Minimos-NT for device simulation and to GTS Vision for visualization
  • Shares templates and process flows with GTS ProEmu – switch between fast emulation and full physical simulation within the same project
  • Ready-to-use technology templates, from mature planar nodes to FinFET
  • Python scripting and distributed job execution via GTS Framework

Precision, reliability, and compatibility with your existing setups and results are our development priorities: releases are backward compatible with existing projects, and upgrades are straightforward.

Planar NMOS
Planar PMOS
NMOS FinFET
PMOS FinFET

Getting Started

Tutorials and application examples are included with every installation – from single process steps to complete DTCO flows. Contact us for a demo or an evaluation license: info@globaltcad.com

For process emulation, see GTS ProEmu.

GTS TCAD Vienna