STEM Image Based Structure Generation for Advanced CMOS Devices

{“@id”:”/api/v1/downloads/3432″,”@type”:”Download”,”id”:3432,”title”:”STEM Image Based Structure Generation for Advanced CMOS Devices”,”filename”:”SISPAD-2024_STEM-Image-Based-Structure-Generation-for-Advanced-CMOS-Devices”,”abstract”:”Process technology computer aided design (TCAD) has become an indispensable tool to characterize proposed future technologies. However, current solutions often require tedious manual calibrations of process flows. Here, we present the automatic processing of electron microscopy (EM) images to 2D and 3D device representations. Parts of the device which are not present in the EM image are emulated to create a structure ready for device simulation. The feasibility of this approach is shown by extracting the fin shape from the EM image of a 7nm FinFET, as well as studying the impact of fin shape on device characteristics in an exemplary variability study. Additionally, the inner spacers and gate shape of a nanosheet (NS) FET are reproduced, showcasing the applicability of the presented approach to different device technologies.”,”level”:null,”doi”:”10.1109/SISPAD62626.2024.10733046″,”status”:”published”,”remarks”:”CoAuthor: X. Klemenschits”,”files”:[{“@type”:”File”,”id”:30587,”name”:”SISPAD-2024_STEM-Image-Based-Structure-Generation-for-Advanced-CMOS-Devices.nofile”,”bytes”:0}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/32″,”@type”:”DownloadTag”,”id”:32,”name”:”finfet”},{“@id”:”/api/v1/download_tags/69″,”@type”:”DownloadTag”,”id”:69,”name”:”tcad”},{“@id”:”/api/v1/download_tags/98″,”@type”:”DownloadTag”,”id”:98,”name”:”nanosheet”},{“@id”:”/api/v1/download_tags/194″,”@type”:”DownloadTag”,”id”:194,”name”:”Semiconductor device modeling”},{“@id”:”/api/v1/download_tags/196″,”@type”:”DownloadTag”,”id”:196,”name”:”Three-dimensional displays”},{“@id”:”/api/v1/download_tags/209″,”@type”:”DownloadTag”,”id”:209,”name”:”Logic gates”},{“@id”:”/api/v1/download_tags/229″,”@type”:”DownloadTag”,”id”:229,”name”:”Field effect transistors”},{“@id”:”/api/v1/download_tags/250″,”@type”:”DownloadTag”,”id”:250,”name”:”FinFETs”},{“@id”:”/api/v1/download_tags/330″,”@type”:”DownloadTag”,”id”:330,”name”:”Libraries”},{“@id”:”/api/v1/download_tags/384″,”@type”:”DownloadTag”,”id”:384,”name”:”Semiconductor device measurement”},{“@id”:”/api/v1/download_tags/385″,”@type”:”DownloadTag”,”id”:385,”name”:”Shape”},{“@id”:”/api/v1/download_tags/386″,”@type”:”DownloadTag”,”id”:386,”name”:”Emulation”},{“@id”:”/api/v1/download_tags/387″,”@type”:”DownloadTag”,”id”:387,”name”:”Semiconductor process modeling”},{“@id”:”/api/v1/download_tags/388″,”@type”:”DownloadTag”,”id”:388,”name”:”EM”},{“@id”:”/api/v1/download_tags/389″,”@type”:”DownloadTag”,”id”:389,”name”:”TEM”},{“@id”:”/api/v1/download_tags/390″,”@type”:”DownloadTag”,”id”:390,”name”:”STEM”},{“@id”:”/api/v1/download_tags/391″,”@type”:”DownloadTag”,”id”:391,”name”:”Image Recognition”}],”date”:”2024-09-24T00:00:00+02:00″,”authors”:”F. Widauer, X. Klemenschits, C. Balla, G. Rzepa, J. M. González-Medina, B. Dongre, G. Strof, Z. Stanojević, and M. Karner”}