A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics

{“@id”:”/api/v1/downloads/3633″,”@type”:”Download”,”id”:3633,”title”:”A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics”,”filename”:”IMW-2021_A-TCAD-Compatible-SONOS-Trapping-Layer-Model-for-Accurate-Programming-Dynamics”,”abstract”:”We present a TCAD model for the accurate description of charging kinetics of trapping layers in 3D gate-all-around VNAND SONOS devices. We build on the established description of the trapping layer as trap-rich semiconductor and show that a strongly field-dependent carrier mobility greatly improves the reproduction of experimental incremental step pulse programming (ISPP) slopes. The resulting model was implemented in a commercial TCAD simulator and shown to accurately predict ISPP and retention loss measurement data with one consistent parameter set.”,”level”:null,”doi”:”10.1109/imw51353.2021.9439598″,”status”:”published”,”remarks”:”CoAuthor: G. Rzepa”,”files”:[{“@type”:”File”,”id”:30608,”name”:”IMW-2021_A-TCAD-Compatible-SONOS-Trapping-Layer-Model-for-Accurate-Programming-Dynamics.nofile”,”bytes”:0}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/69″,”@type”:”DownloadTag”,”id”:69,”name”:”tcad”},{“@id”:”/api/v1/download_tags/76″,”@type”:”DownloadTag”,”id”:76,”name”:”memory simulation”},{“@id”:”/api/v1/download_tags/102″,”@type”:”DownloadTag”,”id”:102,”name”:”flash”}],”date”:”2021-05-16T00:00:00+02:00″,”authors”:”F. Schanovsky, D. Verreck, A. Arreghini, G. Rzepa, Z. Stanojević, C. Kernstock, O. Baumgartner, M. Rosmeulen, and M. Karner”}