Monolithic TCAD Simulation of Phase-Change Memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device

{“@id”:”/api/v1/downloads/1797″,”@type”:”Download”,”id”:1797,”title”:”Monolithic TCAD Simulation of Phase-Change Memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device”,”filename”:”SISPAD-2022_Monolithic-TCAD-Simulation-PCM-PRAM-Ovonic-Threshold-Switch-Selector-Device”,”abstract”:”Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formulate the melting, amorphization and crystallization of phase-change materials as well as their extreme conductivity dependence on both electric field and temperature into a set of self-consistently-solved thermoelectric and phase-field partial-differential equations. However, demonstrations of the ability of such models to match actual experimental results are rare. In addition, such PCM devices also require a so-called selector device – such as an Ovonic Threshold Switching (OTS) device – in series for proper memory operation. However, monolithic simulation of both the PCM and OTS selector device in a single simulation is largely absent from the literature, despite its potential value for material- and design-space explorations. It is the goal of this work to first characterize a PCM device in isolation against experimental data, then to demonstrate the qualitative behavior of a simulated OTS device in isolation and finally to perform a single monolithic simulation of the PCM + OTS device within the confines of a commercially available TCAD solver: GTS Framework.”,”level”:null,”doi”:”10.1016/j.sse.2022.108504″,”status”:”published”,”remarks”:”Mischa SISPAD 2022″,”files”:[{“@type”:”File”,”id”:13662,”name”:”SISPAD-2022_Monolithic-TCAD-Simulation-PCM-PRAM-Ovonic-Threshold-Switch-Selector-Device.pdf”,”bytes”:891937}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/44″,”@type”:”DownloadTag”,”id”:44,”name”:”vsp”},{“@id”:”/api/v1/download_tags/76″,”@type”:”DownloadTag”,”id”:76,”name”:”memory simulation”},{“@id”:”/api/v1/download_tags/151″,”@type”:”DownloadTag”,”id”:151,”name”:”pcm”},{“@id”:”/api/v1/download_tags/152″,”@type”:”DownloadTag”,”id”:152,”name”:”emerging memory”}],”date”:”2022-11-11T00:00:00+01:00″,”authors”:”M. Thesberg, Z. Stanojevi\u0107, O. Baumgartner, C. Kernstock, D. Leonelli, M. Barci, X. Wang, X. Zhou, H. Jiao, G. L. Donadio, D. Garbin, T. Witters, S. Kundu, H. Hody, R. Delhougne, G. Kar, M. Karner”}