Simulation of 3D VNAND structures with grains in the silicon channel. We demonstrate computing the transconductance of such devices with deterministic placement of grains, randomly distributed grains, and orientation-dependent mobilities of the grains.
Project Name: VNAND_Transconductance_3D
PDF revision of 20 November 2023
Download document only (PDF)
Document, read in your PDF viewer;
1 MB
Download project (data + PDF)
Simulation files for GTS Framework;
237 MB