We study an LDMOS transistor using different models and simulation modes. The influence of geometric variations on the output characteristics is surveyed using GTS Structure device templates and the concept of ToolFolders. By applying impact-ionization and self-heating models, the device physics is further investigated. Finally, a transient simulation of the LDMOS switch-on behavior is performed.
Project Name: LDMOS
PDF revision of 20 November 2023
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