We present a novel approach to solving the transport problem in semiconductors. We reformulate the drift-diffusion (DD) equations in terms of the quasi- Fermi-energies as solution variables; a drastic increase in numerical stability is achieved, which permits the simulation of devices at cryogenic temperatures as well as wide bandgap devices using double precision arithmetic, instead of extended precision arithmetic which would otherwise be required to solve these applications using regular DD.
Publication date: 30 December 2022
Download document (PDF)
Document, read in your PDF viewer;
1 MB