CMOS Heavy Ion Impact - Application Example

{“@id”:”/api/v1/downloads/1975″,”@type”:”Download”,”id”:1975,”title”:”CMOS Heavy Ion Impact – Application Example”,”filename”:”CMOS_Heavy_Ion”,”abstract”:”Heavy ion impact events in CMOS structures are investigated by simulation of transient responses of a single transistor, an inverter, an inverter chain and a SRAM cell. “,”level”:3,”doi”:null,”status”:”published”,”remarks”:null,”files”:[{“@type”:”File”,”id”:17495,”name”:”CMOS_Heavy_Ion.zip”,”bytes”:58286552},{“@type”:”File”,”id”:17496,”name”:”CMOS_Heavy_Ion.png”,”bytes”:47289},{“@type”:”File”,”id”:17497,”name”:”CMOS_Heavy_Ion.pdf”,”bytes”:2603346}],”tags”:[{“@id”:”/api/v1/download_tags/11″,”@type”:”DownloadTag”,”id”:11,”name”:”minimos”},{“@id”:”/api/v1/download_tags/23″,”@type”:”DownloadTag”,”id”:23,”name”:”example”},{“@id”:”/api/v1/download_tags/86″,”@type”:”DownloadTag”,”id”:86,”name”:”reliability”},{“@id”:”/api/v1/download_tags/93″,”@type”:”DownloadTag”,”id”:93,”name”:”planar”},{“@id”:”/api/v1/download_tags/101″,”@type”:”DownloadTag”,”id”:101,”name”:”sram”},{“@id”:”/api/v1/download_tags/120″,”@type”:”DownloadTag”,”id”:120,”name”:”TutExaCat-Area: Premium TCAD”},{“@id”:”/api/v1/download_tags/122″,”@type”:”DownloadTag”,”id”:122,”name”:”TutExaCat-Tool: GTS MinimosNT”},{“@id”:”/api/v1/download_tags/148″,”@type”:”DownloadTag”,”id”:148,”name”:”TutExaCat-Appl.: Reliability & Variability”},{“@id”:”/api/v1/download_tags/165″,”@type”:”DownloadTag”,”id”:165,”name”:”release-gts-2023-03″}],”date”:”2023-11-20T00:00:00+01:00″,”authors”:null}