Based on a FinFET structure, the influence of discrete interface and oxide traps as well as discrete dopants on the device characteristics are simulated in Minimos-NT.
Project Name: SOI_FinFET_DiscreteDopantsAndTraps
PDF revision of 20 November 2023
Download document only (PDF)
Document, read in your PDF viewer;
7 MB
Download project (data + PDF)
Simulation files for GTS Framework;
16 MB