New Computational Perspectives on Scattering and Transport in III/V Channel Materials

{“@id”:”/api/v1/downloads/389″,”@type”:”Download”,”id”:389,”title”:”New Computational Perspectives on Scattering and Transport in III/V Channel Materials”,”filename”:”IWCE-2015_Computational-Perspectives-Scattering-Transport-III-V”,”abstract”:”A physically-grounded modeling, simulation, and parameter-extraction framework that targets design and engineering of ultra-scaled devices and next-generation channel materials. The framework consists of a fast and accurate Schrdinger-Poisson solver/mobility extractor coupled to a device simulator. It brings physical modeling of semiconductor channels to device design and engineering which until now has been the domain of TCAD tools based on purely empirical models. In this work, we specifically explore the framework components required to model devices based on III/V compound semiconductors.”,”level”:null,”doi”:”10.1109/IWCE.2015.7301985″,”status”:”published”,”remarks”:null,”files”:[{“@type”:”File”,”id”:1582,”name”:”IWCE-2015_Computational-Perspectives-Scattering-Transport-III-V.pdf”,”bytes”:290958}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/32″,”@type”:”DownloadTag”,”id”:32,”name”:”finfet”},{“@id”:”/api/v1/download_tags/44″,”@type”:”DownloadTag”,”id”:44,”name”:”vsp”},{“@id”:”/api/v1/download_tags/58″,”@type”:”DownloadTag”,”id”:58,”name”:”nds”},{“@id”:”/api/v1/download_tags/60″,”@type”:”DownloadTag”,”id”:60,”name”:”innovation”},{“@id”:”/api/v1/download_tags/71″,”@type”:”DownloadTag”,”id”:71,”name”:”new materials”}],”date”:”2015-10-26T00:00:00+01:00″,”authors”:”Z. Stanojevic, M. Karner, F. Mitterbauer, C. Kernstock”}