Full-Band Modeling of Mobility in p-type FinFETs

{“@id”:”/api/v1/downloads/290″,”@type”:”Download”,”id”:290,”title”:”Full-Band Modeling of Mobility in p-type FinFETs”,”filename”:”SNW-2014_Full-Band-Modeling-Mobility-p-FinFETs”,”abstract”:”We present a framework for modeling the low-field mobility of ultra-narrow Si channels such as FinFETs based on a full-band description of the electronic structure. Hole mobility is of particular interest since its calculation necessitates a full-band approach. Our approach is entirely based on physical modeling and thus naturally includes effects of gate field, crystal orientation, or strain.”,”level”:null,”doi”:”10.1109/SNW.2014.7348592″,”status”:”published”,”remarks”:null,”files”:[{“@type”:”File”,”id”:1256,”name”:”SNW-2014_Full-Band-Modeling-Mobility-p-FinFETs.pdf”,”bytes”:372675}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/32″,”@type”:”DownloadTag”,”id”:32,”name”:”finfet”},{“@id”:”/api/v1/download_tags/60″,”@type”:”DownloadTag”,”id”:60,”name”:”innovation”}],”date”:”2014-06-09T00:00:00+02:00″,”authors”:”Z. Stanojevic, O. Baumgartner, M. Karner, La. Filipovic, C. Kernstock, H. Kosina”}