Hierarchical TCAD Device Simulation of FinFETs

{“@id”:”/api/v1/downloads/285″,”@type”:”Download”,”id”:285,”title”:”Hierarchical TCAD Device Simulation of FinFETs”,”filename”:”SISPAD-2015_Hierarchical-TCAD-Device-Simulation-FinFETs”,”abstract”:”A framework for FinFET design studies is presented. Our physics-based modeling approach allows to accurately capture the effects of channel cross-section, orientation and strain as well as contact resistance – for the first time all in one tool. Using this approach as a reference, the predictiveness of empirical TCAD models is extended by re-calibration. Our hierarchical tool chain is embedded in an industry-proven framework equipped with DOE and optimization modules. The capabilities are demonstrated in a simulation study on a recent FinFET technology node.”,”level”:null,”doi”:”10.1109/SISPAD.2015.7292308″,”status”:”published”,”remarks”:null,”files”:[{“@type”:”File”,”id”:1589,”name”:”SISPAD-2015_Hierarchical-TCAD-Device-Simulation-FinFETs.pdf”,”bytes”:852194}],”tags”:[{“@id”:”/api/v1/download_tags/16″,”@type”:”DownloadTag”,”id”:16,”name”:”doe”},{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/32″,”@type”:”DownloadTag”,”id”:32,”name”:”finfet”},{“@id”:”/api/v1/download_tags/44″,”@type”:”DownloadTag”,”id”:44,”name”:”vsp”},{“@id”:”/api/v1/download_tags/45″,”@type”:”DownloadTag”,”id”:45,”name”:”optimizer”},{“@id”:”/api/v1/download_tags/58″,”@type”:”DownloadTag”,”id”:58,”name”:”nds”},{“@id”:”/api/v1/download_tags/70″,”@type”:”DownloadTag”,”id”:70,”name”:”si pathfinding”}],”date”:”2015-09-11T00:00:00+02:00″,”authors”:”M. Karner, Z. Stanojevic, C. Kernstock, H.W. Cheng-Karner, O. Baumgartner”}