The Impact of Parasitic Capacitances on NCFET Performance – a TCAD Study

Z. Stanojevic, O. Baumgartner, M. Karner
We investigate the effectiveness of the performance boost provided through ferro-electric materials in negative-capacitance FETs (NCFETs) using a hybrid TCAD/compact modeling approach. We show that, in a practical device, the performance boost is dominated by parasitic capacitances. The impact of the doping profile on NCFET performance is studied showing that tight control of the doping is required to maintain the boost in highly scaled devices.
Publication date: 18 June 2018
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