Terman Method to Study Threshold Voltage Hysteresis of Si/SiGe Heterostructures at Cryogenic Temperatures

{“@id”:”/api/v1/downloads/3603″,”@type”:”Download”,”id”:3603,”title”:”Terman Method to Study Threshold Voltage Hysteresis of Si/SiGe Heterostructures at Cryogenic Temperatures”,”filename”:”IRPS-2026_Terman-Method-to-Study-Threshold-Voltage-Hysteresis-of-Si-SiGe-Heterostructures-at-Cryogenic-Temperatures”,”abstract”:”Semiconductor device reliability at cryogenic temperatures has emerged as an important research area driven by quantum computing applications. Si/SiGe heterostructures have established themselves as a leading platform for quantum devices, yet charge trapping at interfaces remains a key reliability concern. This work presents a phenomenological approach to characterize interface trapping in Si/SiGe heterostacks using fixed charge approximations. We demonstrate that threshold voltage hysteresis observed in capacitance-voltage measurements from 4.2 K to 80 K can be accurately modeled by assigning fixed charges at each channel interface. By combining this methodology with the Terman method, we extract the trap energy distribution, revealing a peak located approximately 0.1 eV below the conduction band with a maximum density of $5 \times 10^12 \textcm^-2 \texteV^-1$. The extracted distributions show strong agreement with interface trap density of states reported in literature, supporting the hypothesis that fast-responding interface traps are the primary mechanism driving the observed hysteresis.”,”level”:null,”doi”:”10.1109/irps61424.2026.11499285″,”status”:”published”,”remarks”:”CoAuthor: J. Gonzalez-Medina”,”files”:[{“@type”:”File”,”id”:30576,”name”:”IRPS-2026_Terman-Method-to-Study-Threshold-Voltage-Hysteresis-of-Si-SiGe-Heterostructures-at-Cryogenic-Temperatures.nofile”,”bytes”:0}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”}],”date”:”2026-03-22T00:00:00+01:00″,”authors”:”B. Veryser, F. Stampfl, J. González-Medina, C. Godfrin, B. Raes, D. Wan, K. D. Greve, R. Loo, Y. Shimura, L. Panarella, M. Waltl, A. Grill, M. Houssa, and S. Tyaginov”}