On the feasibility of DoS-engineering for achieving sub-60 mV subthreshold slope in MOSFETs

{“@id”:”/api/v1/downloads/1795″,”@type”:”Download”,”id”:1795,”title”:”On the feasibility of DoS-engineering for achieving sub-60 mV subthreshold slope in MOSFETs”,”filename”:”SISPAD-2022_On-the-Feasibility-of-DoS-Engineering-for-Achieving-Sub-60-mV-Subthreshold-Slope-in-MOSFETs”,”abstract”:”We present the operating principle of an ideal Cold Source Field Effect Transistor and check the DoS source engineering impact on its subthreshold slope. The Subband Boltzmann Transport Equation is solved and the resulting transfer curves in the ballistic regime are presented, as well as those including the effects of scattering. The inclusion of scattering reveals its importance in the rethermalization of the cold carriers at the source extension and the degradation in the static leakage of the device. Finally, we show the impact in the SS when substituting the semiconducting source extension by the cold metal.”,”level”:null,”doi”:”10.1016/j.sse.2022.108494″,”status”:”published”,”remarks”:”JM SISPAD 2022″,”files”:[{“@type”:”File”,”id”:13660,”name”:”SISPAD-2022_On-the-Feasibility-of-DoS-Engineering-for-Achieving-Sub-60-mV-Subthreshold-Slope-in-MOSFETs.pdf”,”bytes”:1598673}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/44″,”@type”:”DownloadTag”,”id”:44,”name”:”vsp”},{“@id”:”/api/v1/download_tags/69″,”@type”:”DownloadTag”,”id”:69,”name”:”tcad”},{“@id”:”/api/v1/download_tags/70″,”@type”:”DownloadTag”,”id”:70,”name”:”si pathfinding”},{“@id”:”/api/v1/download_tags/153″,”@type”:”DownloadTag”,”id”:153,”name”:”beyond cmos”}],”date”:”2022-10-28T00:00:00+02:00″,”authors”:”Jose Maria Gonzalez-Medina, Zlatan Stanojevi\u0107, Zhaozhao Hou, Qiang Zhang, Wei Li, Jeffrei Xu, Markus Karner”}