Predictive Physical Simulation of III/V Quantum-Well MISFETs for Logic Applications

{“@id”:”/api/v1/downloads/394″,”@type”:”Download”,”id”:394,”title”:”Predictive Physical Simulation of III/V Quantum-Well MISFETs for Logic Applications”,”filename”:”ESSDERC-2015_Predictive-Physical-Simulation-III-V-QW-MISFET”,”abstract”:”We present a simulation modeling chain for nano-scaled III/V quantum-well MISFETs. Our methods are based on physical rather than empirical modeling, which allows to obtain predictive simulation results with very few fitting parameters. We use a recent InGaAs-based technology from Intel [1] to validate our simulation results which show excellent agreement with measured capacitance and conductance curves. We further evaluate the properties of a 60 nm long InGaAs quantum-well transistor, finding a sub-threshold slope of 73.5 mV/dec and a DIBL of 103.8 mV/V. A fast numerical computational framework ensures high modeling flexibility; at the same time execution times are kept short making our approach an ideal replacement for empirical device modeling which is still pervasive in TCAD.”,”level”:null,”doi”:”10.1109/ESSDERC.2015.7324776″,”status”:”published”,”remarks”:null,”files”:[{“@type”:”File”,”id”:1588,”name”:”ESSDERC-2015_Predictive-Physical-Simulation-III-V-QW-MISFET.pdf”,”bytes”:300667}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/44″,”@type”:”DownloadTag”,”id”:44,”name”:”vsp”},{“@id”:”/api/v1/download_tags/58″,”@type”:”DownloadTag”,”id”:58,”name”:”nds”},{“@id”:”/api/v1/download_tags/60″,”@type”:”DownloadTag”,”id”:60,”name”:”innovation”},{“@id”:”/api/v1/download_tags/71″,”@type”:”DownloadTag”,”id”:71,”name”:”new materials”}],”date”:”2015-11-12T00:00:00+01:00″,”authors”:”Z. Stanojevic, M. Karner, M. Aichhorn, F. Mitterbauer, V. Eyert, C. Kernstock, H. Kosina”}