Surface-Roughness-Scattering in Non-Planar Channels – the Role of Band Anisotropy

{“@id”:”/api/v1/downloads/380″,”@type”:”Download”,”id”:380,”title”:”Surface-Roughness-Scattering in Non-Planar Channels \u2013 the Role of Band Anisotropy”,”filename”:”SISPAD-2013_SRS-NonPlanar-Channels-Anisotropy”,”abstract”:”We developed a new generic method for evaluating the surface-roughness-induced scattering rate in non-planar semiconductor structures. The method accurately captures band anisotropy and the roughness-induced momentum transfer between the confined states. Strong dependence of SRS-limited electron mobility on crystal orientation was observed with and [110]/(11\u03040) being the optimal orientations.”,”level”:null,”doi”:”10.1109/SISPAD.2013.6650647″,”status”:”published”,”remarks”:null,”files”:[{“@type”:”File”,”id”:1483,”name”:”SISPAD-2013_SRS-NonPlanar-Channels-Anisotropy.pdf”,”bytes”:1722264}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/60″,”@type”:”DownloadTag”,”id”:60,”name”:”innovation”}],”date”:”2013-09-05T00:00:00+02:00″,”authors”:”Z. Stanojevic\u0301, H. Kosina”}