Surface-roughness-scattering in non-planar channels -- The role of band anisotropy

{“@id”:”/api/v1/downloads/3587″,”@type”:”Download”,”id”:3587,”title”:”Surface-roughness-scattering in non-planar channels — The role of band anisotropy”,”filename”:”SISPAD-2013_Surface-roughness-scattering-in-non-planar-channels-The-role-of-band-anisotropy”,”abstract”:”We developed a new generic method for evaluating the surface-roughness-induced scattering rate in non-planar semiconductor structures. The method accurately captures band anisotropy and the roughness-induced momentum transfer between the confined states. Strong dependence of SRS-limited electron mobility on crystal orientation was observed with and [110]/(11̄0) being the optimal orientations.”,”level”:null,”doi”:”10.1109/sispad.2013.6650647″,”status”:”published”,”remarks”:”PrimAuthor: Z. Stanojevic”,”files”:[{“@type”:”File”,”id”:30697,”name”:”SISPAD-2013_Surface-roughness-scattering-in-non-planar-channels-The-role-of-band-anisotropy.pdf”,”bytes”:1722264}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/60″,”@type”:”DownloadTag”,”id”:60,”name”:”innovation”}],”date”:”2013-09-05T00:00:00+02:00″,”authors”:”Z. Stanojević and H. Kosina”}