Simulation Study on the Feasibility of Si as Material for Ultra-Scaled Nanowire Field-Effect Transistors

{“@id”:”/api/v1/downloads/297″,”@type”:”Download”,”id”:297,”title”:”Simulation Study on the Feasibility of Si as Material for Ultra-Scaled Nanowire Field-Effect Transistors”,”filename”:”EUROSOI-ULIS-2016_Study-Si-For-Ultra-Scaled-Nanowire-FETs”,”abstract”:”We present a simulation framework which allows thorough performance evaluation of ultra-scaled devices. Our simulation approach is based on the full solution of the Boltzmann transport equation (BTE) on subbands as calculated from a k\u00b7p-Hamiltonian and including all relevant scattering mechanisms which occur in semiconductors at room temperature. We employ the simulation framework to investigate the performance limits of silicon-based technology for ultra-scaled field-effect transistors in logic applications.”,”level”:null,”doi”:”10.1109/ULIS.2016.7440074″,”status”:”published”,”remarks”:null,”files”:[{“@type”:”File”,”id”:1263,”name”:”EUROSOI-ULIS-2016_Study-Si-For-Ultra-Scaled-Nanowire-FETs.pdf”,”bytes”:219104}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/44″,”@type”:”DownloadTag”,”id”:44,”name”:”vsp”},{“@id”:”/api/v1/download_tags/46″,”@type”:”DownloadTag”,”id”:46,”name”:”nanowire”},{“@id”:”/api/v1/download_tags/58″,”@type”:”DownloadTag”,”id”:58,”name”:”nds”},{“@id”:”/api/v1/download_tags/60″,”@type”:”DownloadTag”,”id”:60,”name”:”innovation”},{“@id”:”/api/v1/download_tags/70″,”@type”:”DownloadTag”,”id”:70,”name”:”si pathfinding”}],”date”:”2016-01-27T00:00:00+01:00″,”authors”:”Z. Stanojevicc, O. Baumgartner, M. Karner, F. Mitterbauer, H. Demel, C. Kernstock”}