The graduation caps indicate the sophistication level of the examples.
In this tutorial, the general handling of GTS Framework as well as the concept of ToolFolders are presented by the example of a MOSFET transistor. Furthermore, the basic concepts of GTS Structure and Minimos-NT are illustrated.
Here, different device simulation capabilities of Minimos-NT are presented: steady state analysis, simulation initialization, transient simulation studies, self-heating effects, and small signal analysis including the extraction of CV-curves.
In this tutorial, the 2D and 3D device editing capabilities of GTS Structure are introduced. First, an nMOS transistor created from the corresponding template is modified by a poly gate. Results of both 2D and 3D simulations are compared.
In this tutorial, mixed-mode simulation capabilities of Minimos-NT are presented. Distributed and compact devices will be used to simuate the output voltage of a single transistor inverter and a CMOS inverter.
In this tutorial, advanced mixed-mode simulation capabilities of Minimos-NT are presented. Distributed and compact devices will be used to simulate CMOS inverters and a CMOS SRAM Cell.
This tutorial demonstrates the design-of-experiments (DOE) and parameter-fitting capabilities (optimizer) of GTS Framework, which are aggregated in the Scripting tool.
In this tutorial, the basic handling of GTS Structure and Minimos-NT from the command line is presented. Using the Linux bash shell, transfer characteristics for different gate oxide thicknesses are generated and a Vth doping is introduced.
You can run many of our examples and tutorials from your web browser — start in MyGTS!
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