6. September 2022

Visit the GTS booth at SISPAD 2022 in beautiful Granada!

Feasibility of DoS-Engineering for Achieving Sub-60 mV Subthreshold Slope in MOSFETs

GTS scientist J.M. González-Medina is presenting his paper “On the Feasibility of DoS-Engineering for Achieving Sub-60 mV Subthreshold Slope in MOSFETs”.

The paper presents the operating principle of an ideal Cold Source Field Effect Transistor (CSFET) and checks the DoS source engineering impact on subthreshold slope. The Subband Boltzmann Transport Equation is solved and the resulting transfer curves in the ballistic regime are presented, as well as those including the effects of scattering. The inclusion of scattering reveals its importance in the rethermalization of the cold carriers at the source extension and the degradation in the static leakage of the device.

Finally, the authors show the impact in the subthreshold slope when substituting the semiconducting source extension by the cold metal.

CSFET Current density in energy-space plot at VG = 0.3 V (a). Distribution function in energy-space for VG = 0.3 V in ballistic (b) and dissipative (c) regimes. The DoS cut-off prevents the carrier at higher energies to flow above the channel barrier only in ballistic regime. Similar distribution function plots in a device with a source Schottky contact (d to g).

Monolithic TCAD Simulation of Phase-Change (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device

Numerous TCAD models have been developed for the simulation of phase-change regions, but demonstrations of the ability of such models to match actual experimental results are rare.

In his poster, GTS senior scientist Mischa Thesberg first characterizes a PCM device against experimental data, then demonstrates the qualitative behavior of a simulated OTS device, and finally performs a single monolithic simulation of a PCM + OTS device within GTS Framework.

This work opens the possibilities of future design and reliability studies of complete PCM+OTS structures – including effects such as thermal contamination/cross-talk, variability and geometry – all within a single simulation.

Complete monolithic simulation of a combined PCM and OTS device (left), current vs. voltage behavior for the PCM-only vs. the PCM+OTS device (right)

SISPAD 2022, Granada, Spain

J.M. González-Medina:
Session 2A: Tunneling and Steep Slope Devices (Rooms Andalucía 1+2), 12:30–12:50:
On the Feasibility of DoS-Engineering for Achieving Sub-60 mV Subthreshold Slope in MOSFETs

Update: The paper is available for download here via MyGTS login.

M. Thesberg:
Poster Session, 15:15–17:15:
P15: Monolithic TCAD Simulation of Phase-Change (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device

Update: The paper is available for download here via MyGTS login.

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