9. March 2021
This simulation approach, combining TCAD and SPICE, will make future technologies more efficient and reliable.
In his paper titled “Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies“, Gerhard Rzepa describes a simulation approach that combines the accuracy of TCAD with the performance of SPICE. With this flow, the variability and reliability of ring-oscillators is studied, demonstrating its applicability to advance device technologies.
Listen to Gerhard’s presentation on March 23rd, 9:15 a.m. (Pacific Daylight Time), Session 4A-CR, 4A.2 Reliability and Variability-Aware DTCO Flow, Demonstration of Projections to N3 FinFET and Nanosheet Technologies.
Abstract
Reliability and variability-aware simulations of logic cells are essential to correctly analyze and predict the performance of upcoming technologies. A simulation flow for DTCO is presented here, which combines the accuracy of TCAD with the performance of SPICE – utilizing parasitic extractions, the impedance field method for variations, and the compact-physics simulator Comphy for reliability. Good agreement with experimental RO performance of iN14 is demonstrated and projections to N3 FinFET and nanosheet technologies are made.
Links
Update (30. March 2021):
For (restricted) access to the paper, see here.