4. May 2023
At the 2023 IEEE International Memory Workshop (IMW), Franz Schanovsky will share insights about the techniques and challenges of 3D TCAD modeling of SONOS flash memory cells. Starting with a short introduction to Charge Trap Memories (CTM) and what TCAD can do, Franz will dive into the current state of TCAD modeling of charge-trapping based SONOS flash memory cells, specifically charge trapping layer dynamics and transconductance variability.
SONOS Physics, Mathematics / Mastering Modeling Challenges
Franz will present the underlying physics as well as mathematics, have a look at the challenges there, and he will show how advanced models are implemented in state-of-the-art TCAD solutions, and how they match with experimental data.
Keywords include:
VNAND, SONOS, CTM, ISPP / ISPE, long-term retention, poly-silicon channel conduction, grains, nitride traps, incremental step-pulse programming, energy relaxation, transconductane variability.
Join the Tutorial at IEEE IMW 2023 in Monterey, California
The tutorial titled Charge trapping memories will take place on Sunday, May 21st 2023, at 11AM PDT in the TCAD session chaired by Antonio Arreghini (imec). Please reserve your spot as spaces are limited – join Franz in Monterey!
IEEE IMW 2023
Together with various academic institutions worldwide, Global TCAD Solutions (GTS) has been doing research in many projects dealing with simulation of FLASH memory devices since a long time. In this tutorial, Franz will present the condensed expertise gained in nearly 2 decades. More on this topic…