GTS @ SISPAD 2026 – Kumamoto, Japan

Whether in cryo­genic elec­tron­ics or in the many, many appli­ca­tions of amor­phous oxide semi­con­duc­tors such as IGZO (dis­plays, DRAM, VNAND, etc.), a proper numer­ical treat­ment of band­tail states is essen­tial to get accu­rate pre­dic­tions.

Dr. Mischa Thes­berg, in his talk “A TCAD-Friendly Numer­ical Treat­ment of Band­tails in Cryo­genic and Amor­phous Oxide Semi­con­duc­tors,” will iden­tify an easy pit­fall in the numer­ical math asso­ci­ated with band­tails that leads to failed simu­la­tions and patho­log­ically bad per­for­mance and will intro­duce a novel, im­proved algo­rithm that leads to better, faster, and more sta­ble results.

The talk is part of Ses­sion 4 (Numer­ical Meth­ods and Algo­rithms) at SISPAD 2026, the Inter­na­tional Con­fer­ence on Simu­la­tion of Semi­con­duc­tor Pro­cesses and Devices, one of the lon­gest-run­ning con­fer­ences devoted to TCAD and advanced mod­el­ing of novel semi­con­duc­tor devices.

SISPAD 2026 takes place from Sep­tem­ber 28 to 30 at Kuma­moto-Jo Hall in Kuma­moto, Japan.
Dr. Thesberg presents on Monday, September 28, 4:50–5:10 PM JST, in Room A2 (3rd floor).

For more information, visit:
SISPAD: https://sispad2026.jp/
Talk: https://pub.confit.atlas.jp/en/event/sispad2026/presentation/Session_4-05