26. November 2025
GTS Scientists Present at IX Schottky Barrier MOS Symposium
We’re pleased to share that Dr. José María González-Medina and Lee-Chi (Ricky) Hung from Global TCAD Solutions were invited to present at the IX Schottky Barrier MOS Symposium at TU Wien.
Invited Talk – J.M. González Medina:
“TCAD Platform to Systematically Study Si-based Multiple Gates FDSOI RFETs”
Dr. Gonzalez-Medina provided insights into TCAD methodologies for reconfigurable field-effect transistors based on FDSOI technology measured by our colleagues from NaMLab.
Contributed Talk – L.-C. (Ricky) Hung:
“Design Considerations and Performance Optimization of Ge-based RFETs”
Ricky examined the key performance factors limiting Schottky-barrier MOS using a semi-classical approach. His analysis focused on Ge-based RFETs fabricated and measured by Prof. Walter Weber’s research group at TU Wien.
The sympo
sium provided excellent opportunities for technical exchange with researchers from many different institutions. We could also meet with our EU Horizon SENSOTERIC project partners from TU Wien, NaMLab and TU Darmstadt, where we focus on smart sensor analog front-ends powered by emerging reconfigurable devices.
These collaborations continue to drive innovation in next-generation semiconductor device technologies and TCAD simulation capabilities.
Learn more about
GTS: https://www.globaltcad.com/
TU Wien: https://www.tuwien.at/
SENSOTERIC: http://sensoteric.eu/
NaMLab: https://www.namlab.com/