13. August 2025
Visit the GTS booth at SISPAD 2025 in beautiful Grenoble!
TCAD Analysis on the Geometry Effects in Three-Independent-Gates Reconfigurable FETs.
GTS senior scientist J.M. González-Medina will present his paper “TCAD Analysis on the Geometry Effects in Three-Independent-Gates Reconfigurable FETs.” This work was conducted in collaboration with the University of Bordeaux and NaMLab as part of the SENSOTERIC European Project.
José’s talk will explore key aspects of the simulation of Three-Independent-Gates (TIG) Reconfigurable FETs (RFETs), including the effects of geometry, Schottky contact tunneling, and trapping. The final results, which were validated against experimental data provided by NaMLab, represent an important TCAD exploration into the underlying physics of operation and potential design bottlenecks of such emerging device technologies.
Effective-Medium TCAD Model of Amorphous In-Ga-Zn-O (a-IGZO) Suitable For Large-Area Devices.
GTS senior scientist Mischa Thesberg will present his paper “An Effective-Medium TCAD Model of Amorphous In-Ga-Zn-O (a-IGZO) Suitable For Large-Area Devices.” This work was conducted with the support of the European Union through the Chips JU ARCTIC project and the Horizon 2020 FVLLMONTI project.
Mischa will discuss the unsuitability of microscopically resolved TCAD models of a-IGZO for the common use-case of the simulation of large-area thin film devices. As an alternative, he will propose and promote the use of a novel alternative effective-medium TCAD model capable of producing experimentally validated results on arbitrarily large devices with coarse meshing.
Is there anything left to do in TCAD?
GTS Chief Technology Officer Zlatan Stanojević is invited as a half-plenary speaker and will talk about the future of TCAD.
Abstract: Over the past decade, the development of commercial Technology Computer-Aided Design (TCAD) software has followed an evolutionary rather than revolutionary path. Alongside established continuum and particle-based approaches in both process and device simulation, advanced carrier transport models – such as deterministic bulk and subband Boltzmann Transport Equation (BTE) solvers and Non-Equilibrium Green’s Functions (NEGF) – have been incorporated into the TCAD toolkit for single-device simulation. At the system level, the field of Design-Technology Co-Optimization (DTCO) has expanded to encompass variability, reliability, and the extension of TCAD methodologies from devices to circuits. However, most of these innovations were introduced over a decade ago, prompting the question: What remains to be developed in TCAD? This talk addresses this question by analyzing current limitations and potential future directions in TCAD across three key dimensions: (1) Fidelity, (2) Integration, and (3) Efficiency – each with particular relevance in commercial and industrial contexts. We examine ongoing challenges in classical TCAD, advanced transport modeling, and DTCO flows, and propose remedies supported by specific tools and examples. Among these remedies, we include various methodologies related to artificial intelligence, machine learning, and hardware accelerators, particularly within the Efficiency dimension.
SISPAD 2025, Grenoble, France (24th – 26th September)
Z. Stanojević:
Is there anything left to do in TCAD?
Session: Advanced TCAD transport modeling, Wednesday, 24th, 10:00–10:30
M. Thesberg:
Effective-Medium TCAD Model of Amorphous In-Ga-Zn-O (a-IGZO) Suitable For Large-Area Devices.
Session: Advanced TCAD transport modeling, Wednesday, 24th, 11:10–11:30
J.M. González-Medina:
TCAD Analysis on the Geometry Effects in Three-Independent-Gates Reconfigurable FETs.
Session: Novel devices and sensors, Wednesday, 24th, 14:10–14:30