An Experimentally Validated TCAD Variability Study of The Relative Performance of In-Ga-Zn-O And Poly-Si-Channel Ferroelectric VNANDs

{“@id”:”/api/v1/downloads/2916″,”@type”:”Download”,”id”:2916,”title”:”An Experimentally Validated TCAD Variability Study of The Relative Performance of In-Ga-Zn-O And Poly-Si-Channel Ferroelectric VNANDs”,”filename”:”IEDM-2024_IGZO-FerroVNAND”,”abstract”:”Memories based on a VNAND structure – whether ferroelectric or charge-trap-based – often suffer from performance issues related to the generally poor quality of their polycrystalline silicon (poly Si) channels. In-Ga-Zn-O (IGZO) has been suggested as an alternative material due to its proven history in thin-film applications. In this work TCAD models are developed that model the variability of polycrystalline silicon, amorphous IGZO and polycrystalline ferroelectric HfZrO2 (HZO) thin layers. All models are validated against experimental results and a complete parameter set for the variability models is given. The models are then used to assess the impact of selecting an IGZO-based device over a poly-Si device on the performance of a ferroelectric bit cell.”,”level”:null,”doi”:”10.1109/IEDM50854.2024.10873461″,”status”:”published”,”remarks”:null,”files”:[{“@type”:”File”,”id”:22814,”name”:”IEDM-2024_IGZO-FerroVNAND.pdf”,”bytes”:1059375}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”},{“@id”:”/api/v1/download_tags/51″,”@type”:”DownloadTag”,”id”:51,”name”:”vnand”},{“@id”:”/api/v1/download_tags/160″,”@type”:”DownloadTag”,”id”:160,”name”:”fram”},{“@id”:”/api/v1/download_tags/164″,”@type”:”DownloadTag”,”id”:164,”name”:”ferroelectric”},{“@id”:”/api/v1/download_tags/179″,”@type”:”DownloadTag”,”id”:179,”name”:”IGZO”}],”date”:”2024-12-10T00:00:00+01:00″,”authors”:”M. Thesberg, Z. Stanojević, F. Schanovsky, J.M. Gonzalez-Medina, G. Rzepa, F. Mitterbauer, O. Baumgartner, and M. Karner”}