In this work a TCAD model of a ferroelectric VNAND device is developed and validated against experimental data. After its accuracy is demonstrated it is then used to explore a number of issues related to the future potential of such devices including: the expected performance if negative trapping effects are reduced, the variability issues created by the polyphasic nature of hafnium-based ferroelectric films, the issue of the destructive nature of the read sweep, and poor effect of ERS pulses. In addition, some mitigation strategies to combat these issues are briefly discussed.
Publication date: 10 September 2023
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