Process Simulation in Micro- and Nano-Electronics

{“@id”:”/api/v1/downloads/3585″,”@type”:”Download”,”id”:3585,”title”:”Process Simulation in Micro- and Nano-Electronics”,”filename”:”IWCN-2023_Process-Simulation-in-Micro-and-Nano-Electronics”,”abstract”:”The continued transistor miniaturization, the introduction of novel materials and geometries in complementary semiconductor-metal-oxide (CMOS) fabrication, and the ever-increasing complexity of the processes required for modern integrated circuits (ICs) must be supported by proper process- and device-technology computer aided design (TCAD) tools. Improvements in performance, power efficiency, and area density (PPA) from one technology node to the next nowadays involves substantial architectural and material innovations through TCAD-supported design-technology co-optimization (DTCO).”,”level”:null,”doi”:””,”status”:”published”,”remarks”:”CoAuthor: X. Klemenschits”,”files”:[{“@type”:”File”,”id”:30557,”name”:”IWCN-2023_Process-Simulation-in-Micro-and-Nano-Electronics.nofile”,”bytes”:0}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”}],”date”:”2023-06-13T00:00:00+02:00″,”authors”:”L. Filipović, T. Reiter, X. Klemenschits, S. Leroch, R. Stella, O. Baumgartner, and A. Hössinger”}