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Comphy — A Compact-Physics Framework for Unified Modeling of BTI

Metal-oxide-semiconductor (MOS) devices are affected by generation, transformation, and charging of oxide and interface defects. Despite 50 years of research, the defect structures and the generation mechanisms are not fully understood. Most light has been shed onto the charging mechanisms of pre-existing oxide defects by using the non-radiative multi-phonon theory. In this work we present how the gist of physical models for pre-existing oxide defects can be efficiently abstracted at a minimal loss of physical foundation and accuracy. Together with a semi-empirical model for the generation and transformation of defects we establish a reaction-limited framework for unified simulation of bias temperature instabilities (BTI). The applications of the framework we present here cover simulation of BTI for negative (NBTI) and positive (PBTI) gate voltages, life time extrapolation, AC stress with arbitrary signals and duty cycles, and gate stack engineering.

5 MB

Advanced Numerical Methods for Semi-classical Transport Simulation in Ultra-Narrow Channels

In this work we present a semi-classical modeling and simulation approach for ultra-narrow channels that has been implemented as part of the Vienna Schrödinger-Poisson (VSP) simulation framework (Baumgartner, J Comput Electron 12:701–721, 2013; http://www.globaltcad.com/en/products/vsp.html (2014)) over the past few years. Our research has been driven by two goals: maintaining high physical accuracy of the models while producing a computationally efficient and flexible simulation code.

33 MB

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A Key Technology to a Visual World The dominant part of information transmitted to the human brain is visual. No wonder that images (either still or moving) are so important to society – with image capturing devices being used in business, research, and leisure. Active-Pixel Sensors (APS), CMOS Targeted and efficient R&D needs to rely … Continued

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