Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

{“@id”:”/api/v1/downloads/3320″,”@type”:”Download”,”id”:3320,”title”:”Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors”,”filename”:”IRPS-2018_Characterization-and-physical-modeling-of-the-temporal-evolution-of-near-interfacial-states-resulting-from-NBTIPBTI-stress-in-nMOSpMOS-transistors”,”abstract”:”The last decade of BTI research has seen a frantic search for ultra-fast measurement methods to correctly understand the impact of fast as-grown traps which impact the initial phase (1 ks) of the degradation and recovery. These methods focus mostly on determining the time-dependence of the threshold voltage shift. Other experimental methods able to resolve the energetic distribution of traps in the bandgap have recently not been as frequently employed as they introduce a large delay and also require switching the device into accumulation, which considerably accelerates recovery. Here we use detailed CV measurements to study NBTI/PBTI in SiO2 nMOS/pMOS capacitors. We extract a unique defect band inside the SiO2 insulator which can describe the build-up of near-interfacial states over time in all four combinations using our recently suggested gate-sided hydrogen release model. Our results suggest that depending on the transistor type and stress bias conditions, the generated slowly-recovering near-interfacial states are due to a combination of slower oxide traps and faster Pb centers.”,”level”:null,”doi”:”10.1109/irps.2018.8353540″,”status”:”published”,”remarks”:null,”files”:[{“@type”:”File”,”id”:29606,”name”:”IRPS-2018_Characterization-and-physical-modeling-of-the-temporal-evolution-of-near-interfacial-states-resulting-from-NBTIPBTI-stress-in-nMOSpMOS-transistors.nofile”,”bytes”:0}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”}],”date”:”2018-03-01T00:00:00+01:00″,”authors”:”T. Grasser, B. Stampfer, M. Waltl, G. Rzepa, K. Rupp, F. Schanovsky, G. Pobegen, K. Puschkarsky, H. Reisinger, B. O’Sullivan, and B. Kaczer”}