A Unified Physical BTI Compact Model in Variability-Aware DTCO Flow: Device Characterization and Circuit Evaluation on Reliability of Scaling Technology Nodes

{“@id”:”/api/v1/downloads/3626″,”@type”:”Download”,”id”:3626,”title”:”A Unified Physical BTI Compact Model in Variability-Aware DTCO Flow: Device Characterization and Circuit Evaluation on Reliability of Scaling Technology Nodes”,”filename”:”VLSI-T-2021_A-Unified-Physical-BTI-Compact-Model-in-Variability-Aware-DTCO-Flow-Device-Characterization-and-Circuit-Evaluation-on-Reliability-of-Scaling-Technology-Nodes”,”abstract”:”We developed a unified physical and statistical compact model of Bias Temperature Instability (BTI) effects on scaling technology nodes towards robust VLSI design, with an excessive amount of complex stress/recovery pattern characterization, ultralong-term aging prediction, and technology of statistical variability (TSV) analysis, realizing cycle-to-cycle/device-to-device reliability evaluations. This model is based on a 2/4-state Defect-Centric (DC) theory and verified by TCAD simulation, providing a deep insight into the properties of the defects (e.g., energy level distribution, occupancy probability etc.). By calibration to Fin-FET experiments (of down to 14 nm node), it is successfully implemented into BSIM-CMG for analysis of dynamic time evolutionary and dynamic voltage scaling. This physics-, variablity-, and tolerance-aware model has the potential to boost the design technology co-optimization (DTCO) flow of reliability in VLSI to the next generation of technology nodes.”,”level”:null,”doi”:null,”status”:”published”,”remarks”:”CoAuthor: F. SchanovskyrnConference Location: Kyoto, Japan”,”files”:[{“@type”:”File”,”id”:30601,”name”:”VLSI-T-2021_A-Unified-Physical-BTI-Compact-Model-in-Variability-Aware-DTCO-Flow-Device-Characterization-and-Circuit-Evaluation-on-Reliability-of-Scaling-Technology-Nodes.nofile”,”bytes”:0}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”}],”date”:”2021-06-13T00:00:00+02:00″,”authors”:”Y. Zhao, L. Wang, Z. Wu, F. Schanovsky, X. Xu, H. Yang, H. Yu, J. Lai, D. Liu, X. Chuai, Y. Su, X. Wang, L. Li, and M. Liu”}