A Physical Model for the Hysteresis in MoS extsubscript2 Transistors

{“@id”:”/api/v1/downloads/3338″,”@type”:”Download”,”id”:3338,”title”:”A Physical Model for the Hysteresis in MoS\textsubscript2 Transistors”,”filename”:”IEEE-2018_A-Physical-Model-for-the-Hysteresis-in-MoStextsubscript2-Transistors”,”abstract”:”Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled. Here, we demonstrate that the hysteresis phenomenon can be captured accurately by a previously established non-radiative multiphonon model describing charge capture and emission events in the surrounding dielectrics. The charge transfer model is embedded into a drift-diffusion based TCAD simulation environment, which was adapted to 2D devices. Our modeling setup was validated against measurement data on a back-gated single-layer MoS2 transistor with SiO2 as a gate dielectric. We use the modeling approach to gain a thorough understanding of the hysteresis, which will help to control this problem in future devices.”,”level”:null,”doi”:”10.1109/jeds.2018.2829933″,”status”:”published”,”remarks”:”CoAuthor: G. Rzepa”,”files”:[{“@type”:”File”,”id”:29624,”name”:”IEEE-2018_A-Physical-Model-for-the-Hysteresis-in-MoStextsubscript2-Transistors.nofile”,”bytes”:0}],”tags”:[{“@id”:”/api/v1/download_tags/20″,”@type”:”DownloadTag”,”id”:20,”name”:”publication”}],”date”:”2018-04-01T00:00:00+02:00″,”authors”:”T. Knobloch, G. Rzepa, Y. Y. Illarionov, M. Waltl, F. Schanovsky, B. Stampfer, M. M. Furchi, T. Mueller, and T. Grasser”}