At the 2019 SISPAD in Udine, we invite you to hear D. Verreck's talk "3D TCAD Model for Poly-Si Channel Current and Variability in Vertical NAND Flash Memory", co-autored by GTS scientists.
The paper demonstrates a simulation flow for 3D NAND flash strings, implemented in GTS Framework. The particular conduction in the poly-Si channel is captured through discrete traps and a reduced carrier velocity at the grain boundaries, combined with orientation-dependent intra-grain mobility. With this model, experimental temperature behavior and statistical distribution of ION were reproduced. It turned out that the interface traps are the origin for the widely reported positive temperature dependence.
Wednesday September 4, Session 3 - Memories, Room T9, 15:00-15:20
Official SISPAD program (scroll down to download PDF containing detailed schedule)
Have a cup of coffee with GTS CEO Markus Karner, who will be there on Thursday, Sept. 5, to discuss your expectations for an ideal TCAD solution - and let us see how close we can get.