In this tutorial, the general handling of GTS Framework as well as the concept of ToolFolders are presented by the example of a MOSFET transistor. Furthermore, the basic concepts of GTS Structure and Minimos-NT are illustrated.

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Here, different device simulation capabilities of Minimos-NT are presented: steady state analysis, simulation initialization, transient simulation studies, self-heating effects, and small signal analysis including the extraction of CV-curves.

In this tutorial, the 2D and 3D device editing capabilities of GTS Structure are introduced. First, an nMOS transistor created from the corresponding template is modified by a poly gate. Results of both 2D and 3D simulations are compared.

In this tutorial, mixed-mode simulation capabilities of Minimos-NT are presented. Distributed and compact devices will be used to simuate the output voltage of a single transistor inverter and a CMOS inverter.

In this tutorial, advanced mixed-mode simulation capabilities of Minimos-NT are presented. Distributed and compact devices will be used to simulate CMOS inverters and a CMOS SRAM Cell.

This tutorial demonstrates the design-of-experiments (DOE) and parameter-fitting capabilities (optimizer) of GTS Framework, which are aggregated in the Scripting tool.

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In this tutorial, the basic handling of GTS Structure and Minimos-NT from the command line is presented. Using the Linux bash shell, transfer characteristics for different gate oxide thicknesses are generated and a Vth doping is introduced.