Global TCAD Solutions

Predictions based on Physics

SOI FinFET Discrete Dopants


This example demonstrates the capabilities of Minimos-NT to capture the atomistic nature of traps and dopants. With the help of a FinFET structure, the influence of discrete interface and oxide traps as well as discrete dopants on the device characteristics are illustrated.

This example was created using GTS Framework Release 2014.09. Other releases might need adjustments or have slightly different user interfaces.