In this example we investigate the effects of mechanical stress in a PMOS FinFET with
SiGe Source/Drain Epi layers. Figure 1 shows the project folder of the example. The first
ToolFolder contains the structure of the PMOS device. GTS VSP is used to determine
the mechanical stress in the fin. GTS Minimos-NT then calculates the current-voltage
characteristics under varying stress conditions. An empirical piezoelectric stress model is
applied to calculate the stress-dependent mobility.