This example illustrates the simulation of heavy ion impact events in CMOS structures
using GTS Framework. The transient responses of a single transistor, an inverter, an
inverter chain combining distributed and compact devices, and an SRAM cell, triggered by high-energy particle interaction are investigated.
A heavy ion model implemented in Minimos-NT is used to calculate the electron/hole pair generation in the active semiconductor region. The transient behavior of those devices in a circuit is simulated in different configurations.