Global TCAD Solutions

Predictions based on Physics

CMOS Heavy Ion Impact



This example illustrates the simulation of heavy ion impact events in CMOS structures
using GTS Framework.  The transient responses of a single transistor, an inverter, an
inverter chain combining distributed and compact devices, and an SRAM cell, triggered by high-energy particle interaction are investigated.
A heavy ion model implemented in Minimos-NT is used to calculate the electron/hole pair generation in the active semiconductor region. The transient behavior of those devices in a circuit is simulated in different configurations.

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