Global TCAD Solutions

Predictions based on Physics

Device Editor

In this example, we will edit the doping profile of a two-dimensional device.

Changing doping profiles will be demonstrated by introducing a threshold voltage doping to an nMOS template. As we want to survey the influence of the doping, we will start with simulating the transfer characteristic of the original nMOS template.

It is assumed that you are already familiar with GTS Framework and the idea of projects and ToolFolders, as explained in the Getting Started tutorial.