This example demonstrates the use of oxide defects in stationary and transient simulations. The device under test is a 3D planar pMOS device based on the template database of the GTS Framework. Transfer characteristics is calculated at different drain voltages and temperatures, and (N-)BTI degradation simulations using the NMP-4state model are applied.
This example was created using GTS Framework Release 2013. Other releases might need adjustments or have slightly different user interfaces.