This example demonstrates the usage of the GTS Nano Device Simulator to model n-type and p-type bulk FinFETs. It is implemented in GTS Framework. In a first step, the drain current in linear and saturation regime of an nMOS FinFET is calculated using the phasespace formalism of the Boltzmann transport equation (BTE). The subbands are calculated using the effective mass approximation and compared to current characteristics, that only include quantum correction. In the second part of the example we simulate a pMOS bulk FinFET using the kp bandstructure for the subband-BTE solver. We demonstrate several ways to reduce the computational effort without loss of physical accuracy. Finally, we investigate the changes in drain current with varying fin heights.