Non-Planar Transistor Simulation
20 nm Nanowire
This tutorial shows a simulation of a non-planar transistor, using a GTS-supplied 3D template of an NMOS 20nm nanowire transistor: Electron concentration and transfer characteristics are calculated for two different channel orientations, and the effect of stress applied to the device is demonstrated.
To achieve these results, a typical Nano Device Simulator tool flow is presented. It consists of a coupled Minimos / VSP simulation (involving VSP’s Kubo-Greenwood solver). The setup is performed quickly in a small project, using the graphical user interface of GTS Framework.
It is assumed that you are already familiar with GTS Framework and the idea of projects and ToolFolders, as explained in the Getting Started tutorial.